دیتاشیت NTD80N02-1G
مشخصات دیتاشیت
نام دیتاشیت |
NTD80N02
|
حجم فایل |
121.164
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
24V
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Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
5.8mOhm @ 80A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
42nC @ 4.5V
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Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 20V
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FET Feature:
-
-
Power Dissipation (Max):
75W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
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Supplier Device Package:
I-PAK
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Base Part Number:
NTD80
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detail:
N-Channel 24V 80A (Tc) 75W (Tc) Through Hole I-PAK